MRF7S18125BHSR5

Overview

The MRF7S18125BHSR5 is an N-channel enhancement-mode lateral MOSFET designed for GSM and GSM EDGE base station applications operating between 1800 MHz and 2000 MHz. It supports Class AB and Class C modulations with a typical drain efficiency of 55% at 125 Watts CW output power (1930 MHz). The device features integrated ESD protection, internal matching networks, and RoHS compliance. Maximum ratings include a drain-source voltage of 65 Vdc, gate-source voltage limits from -6.0 to +10 Vdc, and an operating junction temperature up to 225 °C.

Feature Summary

• Internally matched input and output circuits for simplified design integration
• Integrated electrostatic discharge (ESD) protection mechanisms
• Characterized using series equivalent large-signal impedance parameters
• Capable of handling high voltage standing wave ratio (VSWR) conditions

Applications

• GSM base station power amplification
• GSM EDGE base station power amplification
• Class AB cellular base station modulation
• Class C cellular base station modulation

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The datasheet indicates that the R3 suffix corresponds to tape and reel packaging containing 250 units per 56 mm reel. Ensure compatibility with the required thermal management solutions, as continuous operation at maximum temperatures affects mean time to failure. Confirm RoHS compliance status through the manufacturer's material declaration before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high linearity and efficiency in the 1800-2000 MHz band. The internal matching reduces external component count but requires adherence to specified test fixture impedances. Evaluate thermal resistance characteristics carefully, as junction-to-case resistance varies significantly based on output power levels. Validate performance under actual load pull conditions rather than relying solely on standard 50-ohm system data.

Part Context

This device belongs to the Freescale Semiconductor RF Power Field Effect Transistor family, specifically engineered for wireless communication infrastructure. Originally developed by Freescale Semiconductor, these lateral MOSFETs are optimized for robust performance in demanding cellular environments. The product line emphasizes reliability and ease of use through integrated protection and matching features tailored for base station architectures.

Replacement Considerations

Consult official cross-reference lists or contact the manufacturer directly for verified substitute part numbers. Do not assume functional equivalence with other models in the series without reviewing specific electrical parameter deviations and pinout configurations.

FAQ

What is the typical drain efficiency at 125 Watts CW output?

The typical drain efficiency is 55% when operating at 28 Volts, 1100 mA quiescent current, and 1930 MHz.

How does the device handle Electrostatic Discharge?

The MRF7S18125BHSR5 includes integrated ESD protection characterized to meet minimum Human Body Model Class 1B, Machine Model Class A, and Charge Device Model Class IV standards.

Is the device internally matched?

Yes, the transistor is internally matched on both the input and output sides to facilitate easier circuit design and implementation.