SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MRF7S18170HR3 is an N-channel enhancement-mode lateral MOSFET designed for CDMA base station applications operating between 1805 and 1880 MHz. It delivers 50 Watts average output power at 28 Volts with a drain efficiency of 31% in single-carrier W-CDMA configurations. The device features internal matching for simplified integration and supports Class AB and Class C amplifier topologies.
Verify the specific datasheet revision and manufacturer documentation to confirm current production status and electrical characteristics. Ensure compatibility with system thermal management requirements, as the device is rated for high-power CW output. Confirm RoHS compliance status matches project specifications before finalizing procurement orders.
Select this component for designs requiring high linearity and power handling in the 1805–1880 MHz band. The internal matching network reduces external component count and simplifies PCB layout. Consider the device's capability to handle high VSWR conditions when designing input and output impedance networks for robust system performance.
This part belongs to the MRF7S series of RF power lateral MOSFETs from Freescale Semiconductor, now part of NXP Semiconductors. These devices are engineered specifically for demanding wireless infrastructure environments where reliability and linearity are critical for maintaining signal integrity in multicarrier systems.
Consult official NXP/Freescale substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics against the original datasheet specifications.