MRF7S18170HR3

MRF7S18170HR3

$105.46
  • Description:RF MOSFET LDMOS 28V NI880H
  • Series:-

SKU:a9fa2ca83f2c Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V NI880H
  • Series:-
  • Mfr:Freescale Semiconductor
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:1.805GHz ~ 1.88GHz
  • Gain:17.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:1.4 A
  • Power - Output:50W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-957A
  • Supplier Device Package:NI-880H-2L
  • Configuration:-

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MRF7S18170HR3

Overview

The MRF7S18170HR3 is an N-channel enhancement-mode lateral MOSFET designed for CDMA base station applications operating between 1805 and 1880 MHz. It delivers 50 Watts average output power at 28 Volts with a drain efficiency of 31% in single-carrier W-CDMA configurations. The device features internal matching for simplified integration and supports Class AB and Class C amplifier topologies.

Feature Summary

  • Internally matched for ease of use
  • Integrated ESD protection
  • Greater negative gate-source voltage range for improved Class C operation
  • Designed for digital predistortion error correction systems

Applications

  • CDMA base station amplifiers
  • Multicarrier amplifier applications
  • PCN/PCS cellular radio transmitters
  • Wireless Local Loop (WLL) applications

Procurement Notes

Verify the specific datasheet revision and manufacturer documentation to confirm current production status and electrical characteristics. Ensure compatibility with system thermal management requirements, as the device is rated for high-power CW output. Confirm RoHS compliance status matches project specifications before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high linearity and power handling in the 1805–1880 MHz band. The internal matching network reduces external component count and simplifies PCB layout. Consider the device's capability to handle high VSWR conditions when designing input and output impedance networks for robust system performance.

Part Context

This part belongs to the MRF7S series of RF power lateral MOSFETs from Freescale Semiconductor, now part of NXP Semiconductors. These devices are engineered specifically for demanding wireless infrastructure environments where reliability and linearity are critical for maintaining signal integrity in multicarrier systems.

Replacement Considerations

Consult official NXP/Freescale substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics against the original datasheet specifications.

MRF7S18170HR3MRF7S18170HR3
$105.46
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