MRF7S19080HR3

Overview

The MRF7S19080HR3 is an LDMOS RF power transistor manufactured by NXP USA Inc. It operates at a frequency of 1.99 GHz with a gain of 18 dB. The device delivers 24 W of output power when tested at 28 V and 750 mA. It features a 65 V rated voltage and utilizes the NI-780H-2L flange mount package. This component is designed for high-frequency radio frequency applications requiring robust solid-state performance.

Feature Summary

• Utilizes LDMOS technology for reliable solid-state RF power generation
• Engineered to replace magnetrons in industrial systems
• Provides precise control over the full dynamic power range

Applications

• Industrial heating and drying systems
• Material welding equipment
• Plasma lighting systems

Procurement Notes

Verify the current status as discontinued before procurement planning. Confirm that the NI-780H-2L flange mount package matches existing thermal and mechanical constraints. Ensure compatibility with 28 V supply rails and 1.99 GHz operating frequencies. Check for available replacement options from the manufacturer due to end-of-life status.

Selection Notes

Select this component for applications requiring direct replacement of vacuum tube technologies with solid-state alternatives. It is suitable for systems needing high precision and long operational life without performance degradation. Consider the specific frequency and power requirements against the 24 W output capability at 1.99 GHz.

Part Context

This part belongs to the MRF7 series of RF power transistors designed for industrial use. It represents a transition from magnetron-based solutions to modern solid-state RF generation. The device offers extended operational hours compared to traditional vacuum tubes, supporting continuous duty cycles in demanding industrial environments.

Replacement Considerations

No public confirmed substitute part numbers are available.