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The MRF7S19100NBR1 is an N-channel enhancement-mode lateral MOSFET designed for CDMA base station applications. It operates within the frequency range of 1930 to 1990 MHz, delivering 29 W average output power with a typical gain of 17.5 dB. The device utilizes LDMOS technology and is housed in a TO-270-4 surface-mount package. It supports standard packaging formats including tape and reel.
Verify component status as this part may be obsolete or discontinued. Confirm availability through authorized distributors or secondary market suppliers. Ensure compatibility with existing design specifications before procurement. Check for alternative replacement parts if supply chain constraints exist.
Select this component for designs requiring 29 W output at 1930-1990 MHz. Consider thermal management due to power dissipation. Verify package compatibility with PCB layout. Evaluate suitability for Class AB linear amplification requirements in wireless infrastructure.
Part of the MRF7S19100N series from Freescale (now NXP). Designed for wireless communication infrastructure. Represents LDMOS technology evolution for cellular base stations. Provides high linearity and efficiency for multicarrier signals.
Check datasheet for direct pin-compatible alternatives. Review electrical parameter overlaps for equivalent performance. Consult manufacturer obsolescence notices for recommended upgrades.