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The MRF7S19100NR1 is an N-channel RF LDMOS power transistor designed for cellular base station applications. It operates within the 1930–1990 MHz frequency range, delivering 29 W of average output power with a gain of 17.5 dB at 28 Vdc and 1000 mA quiescent current. The device features a 65 V drain-source breakdown voltage and utilizes a TO-270WB-4 surface-mount package. It supports operation from -65°C to +150°C.
Verify component authenticity through authorized distribution channels due to discontinuation status. Confirm RoHS compliance and moisture sensitivity level handling requirements during storage and assembly. Cross-reference datasheet revisions to ensure parameter consistency with design specifications.
Select this component for applications requiring high linearity and efficiency in the 1900 MHz band. Ensure the PCB layout accommodates the TO-270WB-4 footprint and thermal management needs for 29 W output. Validate biasing circuits for 28 V supply and 1 A quiescent current requirements.
This part belongs to the MRF7S series of RF power transistors developed by Freescale Semiconductor, now NXP Semiconductors. The series targets wireless communication infrastructure, providing a balance of power density and gain for modern cellular standards.
MRF7S19100NBR1 is a documented alternative variant within the same family, sharing similar electrical characteristics but potentially differing in packaging or reel configuration. Verify pinout compatibility before substitution.