MRF7S21080HSR3

Overview

The MRF7S21080HSR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications within the 2110 to 2170 MHz frequency range. It supports Class AB and Class C operation for TD-SCDMA, PCN-PCS, and cellular radio systems. Typical single-carrier W-CDMA performance at VDD = 28 Volts and IDQ = 800 mA yields 22 Watts average output power at 2167.5 MHz with 18 dB gain and 32% drain efficiency. The device handles 10:1 VSWR and delivers approximately 80 Watts CW peak tuned output power at 2140 MHz under 32 Vdc conditions.

Feature Summary

• Internally matched input and output networks for simplified circuit integration
• Integrated electrostatic discharge (ESD) protection mechanisms
• Extended negative gate-source voltage range optimized for improved Class C amplifier operation
• Characterized using series equivalent large-signal impedance parameters

Applications

• CDMA base station amplifiers
• TD-SCDMA system implementations
• PCN-PCS cellular radio transmitters
• Multicarrier amplifier designs

Procurement Notes

Verify component authenticity by matching the part number against official manufacturer documentation. Confirm that the ordering suffix corresponds to the specific tape and reel packaging configuration. Ensure compliance with RoHS standards as indicated in the datasheet specifications. Validate thermal management requirements against maximum junction temperature ratings before deployment.

Selection Notes

Evaluate thermal resistance characteristics relative to the intended case operating temperature. Consider the device's capability to handle high voltage standing wave ratios during mismatched load conditions. Assess compatibility with digital predistortion error correction systems required for multicarrier signal processing. Verify that the internal matching network aligns with the target system impedance requirements.

Part Context

This lateral N-channel RF power MOSFET belongs to a family of devices engineered for wireless communication infrastructure. It utilizes enhancement-mode technology to provide reliable amplification in demanding base station environments. The component integrates robust protection features and standardized packaging to facilitate widespread adoption in telecommunications hardware design.

Replacement Considerations

Consult official manufacturer documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter alignment before implementing any alternative components in existing designs.

FAQ

What is the typical power gain for this device?

The typical power gain is 18 dB under standard single-carrier W-CDMA test conditions.

Is the device internally matched?

Yes, the MRF7S21080HSR3 features integrated input and output matching networks to simplify application design.

What is the maximum operating junction temperature?

The maximum operating junction temperature is specified as 225 °C.