MRF7S21110HR3

MRF7S21110HR3

$64.07
  • Description:RF MOSFET LDMOS 28V NI780
  • Series:-

SKU:f2a902fa5c8f Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V NI780
  • Series:-
  • Mfr:Freescale Semiconductor
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:2.17GHz
  • Gain:17.3dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.1 A
  • Power - Output:33W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:SOT-957A
  • Supplier Device Package:NI-780H-2L
  • Configuration:-

Download product information

MRF7S21110HR3

Overview

The MRF7S21110HR3 is an N-channel enhancement-mode lateral MOSFET designed for CDMA base station applications operating between 2110 and 2170 MHz. It delivers 33 Watts average output power at 28 Volts with 1100 mA quiescent current. Key performance metrics include a power gain of 17.3 dB, drain efficiency of 32.5%, and an ACPR of -38 dBc at 5 MHz offset. The device handles 10:1 VSWR at 32 Vdc and provides 110 Watts peak tuned output power.

Feature Summary

  • Internally matched for ease of use
  • Integrated ESD protection
  • Greater negative gate-source voltage range for improved Class C operation
  • Designed for digital predistortion error correction systems

Applications

  • CDMA base station amplifiers
  • Multicarrier amplifier applications
  • PCN/PCS/cellular radio systems
  • WLL applications

Procurement Notes

Verify the R3 suffix indicates tape and reel packaging containing 250 units on a 56 mm wide, 13-inch reel. Confirm RoHS compliance status matches current regulatory requirements. Ensure the component source is an authorized distributor or manufacturer representative to guarantee authenticity and traceability for RF power applications.

Selection Notes

Select this component for single-carrier W-CDMA designs requiring high linearity and power efficiency in the 2110-2170 MHz band. It is suitable for Class AB and Class C operations. Consider its capability for digital predistortion integration when designing complex modulation schemes. Verify thermal management requirements for the specified 33 Watt average output power level.

Part Context

This part belongs to the MRF7S series of lateral N-channel RF power MOSFETs from Freescale Semiconductor, now NXP Semiconductors. These devices are engineered specifically for cellular infrastructure, offering robust performance in demanding wireless communication environments. The series emphasizes reliability and ease of integration through internal matching networks.

Replacement Considerations

Consult official datasheets for direct pin-compatible alternatives within the same frequency range. Verify that any substitute maintains similar gain, efficiency, and linearity specifications for W-CDMA applications.

MRF7S21110HR3MRF7S21110HR3
$64.07
Buy Now