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The MRF7S21110HR3 is an N-channel enhancement-mode lateral MOSFET designed for CDMA base station applications operating between 2110 and 2170 MHz. It delivers 33 Watts average output power at 28 Volts with 1100 mA quiescent current. Key performance metrics include a power gain of 17.3 dB, drain efficiency of 32.5%, and an ACPR of -38 dBc at 5 MHz offset. The device handles 10:1 VSWR at 32 Vdc and provides 110 Watts peak tuned output power.
Verify the R3 suffix indicates tape and reel packaging containing 250 units on a 56 mm wide, 13-inch reel. Confirm RoHS compliance status matches current regulatory requirements. Ensure the component source is an authorized distributor or manufacturer representative to guarantee authenticity and traceability for RF power applications.
Select this component for single-carrier W-CDMA designs requiring high linearity and power efficiency in the 2110-2170 MHz band. It is suitable for Class AB and Class C operations. Consider its capability for digital predistortion integration when designing complex modulation schemes. Verify thermal management requirements for the specified 33 Watt average output power level.
This part belongs to the MRF7S series of lateral N-channel RF power MOSFETs from Freescale Semiconductor, now NXP Semiconductors. These devices are engineered specifically for cellular infrastructure, offering robust performance in demanding wireless communication environments. The series emphasizes reliability and ease of integration through internal matching networks.
Consult official datasheets for direct pin-compatible alternatives within the same frequency range. Verify that any substitute maintains similar gain, efficiency, and linearity specifications for W-CDMA applications.