MRF7S21150HSR3

Overview

The MRF7S21150HSR3 is a lateral N-channel RF power MOSFET designed for W-CDMA applications. It operates within the 2110–2170 MHz frequency range and delivers an average output power of 44 W at 28 V. The device features a gain of 17.5 dB and a drain current of 1.35 A. Packaged in the NI-780S format, this component serves as a high-performance solution for cellular base station power amplification.

Feature Summary

• Lateral N-channel RF power MOSFET architecture optimized for linear amplification
• Designed specifically for single-carrier W-CDMA signal processing
• Integrated thermal management capabilities within the NI-780S package

Applications

• W-CDMA cellular base station power amplifiers
• RF power amplification modules
• Telecommunications infrastructure equipment

Procurement Notes

Verify the complete part number including the suffix to ensure correct packaging and reel specifications. Confirm that the supplier provides official Freescale Semiconductor documentation or authorized distribution channels. Check for any specific handling requirements related to electrostatic discharge protection during storage and installation.

Selection Notes

Select this component when designing for W-CDMA bands requiring 44 W average output power. Ensure the system voltage matches the 28 V requirement. Consider the NI-780S package dimensions for PCB layout compatibility. Verify thermal dissipation needs align with the device's lateral structure characteristics.

Part Context

This device belongs to the MRF7S series of RF power transistors from Freescale Semiconductor. It utilizes silicon LDMOS technology to achieve high linearity and efficiency. The series is targeted at mobile communication base stations, providing reliable performance in demanding RF environments.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official manufacturer cross-reference lists for compatible alternatives.