MRF7S21170HSR3

Overview

The MRF7S21170HSR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications operating between 2110 and 2170 MHz. It supports Class AB and Class C operation for PCN-PCS/cellular radio and WLL systems. The device delivers a typical single-carrier W-CDMA output of 50 Watts average power at 28 Volts drain supply with 1400 mA quiescent current. It achieves approximately 170 Watts CW output power at the 1 dB compression point and handles 5:1 VSWR at 32 Vdc.

Feature Summary

• Optimized for Doherty amplifier configurations
• Internally matched input and output networks
• Integrated electrostatic discharge protection circuitry
• Characterized using series equivalent large-signal impedance parameters

Applications

• CDMA base station amplifiers
• Multicarrier amplifier stages
• PCN-PCS cellular radio transmitters
• Wireless Local Loop (WLL) systems

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official documentation. Ensure proper ESD handling protocols are followed during storage and assembly. Validate thermal management requirements against maximum junction temperature limits specified in the datasheet.

Selection Notes

Select this component for wideband RF power amplification requiring high linearity and efficiency. Consider the internal matching for simplified circuit design. Evaluate thermal resistance characteristics for heat sink sizing. Verify compatibility with digital predistortion systems for linearization needs.

Part Context

This lateral N-channel RF power MOSFET belongs to the MRF7S family developed by Freescale Semiconductor, now part of NXP Semiconductors. The device utilizes silicon technology optimized for high-power wireless infrastructure applications. It represents a generation of internally matched devices designed to reduce external component count and improve reliability in base station environments.

Replacement Considerations

MRF7S21170HR3