MRF7S21210HSR3

Overview

The MRF7S21210HSR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications within the 2110 to 2170 MHz frequency range. It supports Class AB and Class C operation for typical cellular modulation formats. Key electrical parameters include a drain-source voltage of 65 Vdc, gate-source voltage limits of -6.0 to +10 Vdc, and an operating junction temperature up to 225 °C. Typical single-carrier W-CDMA performance at 28 Volts and 1400 mA quiescent current yields 63 Watts average output power with 18.5 dB gain and 29% efficiency.

Feature Summary

• Internally matched input and output networks for simplified circuit design
• Integrated electrostatic discharge protection mechanisms
• Extended negative gate-source voltage range optimized for Class C operation
• Characterized using series equivalent large-signal impedance parameters

Applications

• CDMA base station amplifiers
• Class AB cellular radio power amplification
• Class C wireless local loop applications
• Digital predistortion error correction systems

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revision status matches design requirements. Ensure thermal management solutions align with specified junction-to-case resistance values. Validate package compatibility with NI-780 mounting standards before integration into final assemblies.

Selection Notes

Evaluate thermal dissipation capabilities against expected duty cycles and ambient conditions. Consider impedance matching network complexity reduction due to internal matching features. Assess suitability for digital predistortion architectures requiring specific linearity characteristics. Verify voltage headroom meets system supply constraints.

Part Context

This lateral N-channel RF power MOSFET belongs to the MRF7S family developed by Freescale Semiconductor. The device utilizes silicon technology optimized for high-power cellular infrastructure. It serves as a critical active component in transmitter chains requiring robust linearity and power handling capabilities across wide bandwidths.

Replacement Considerations

MRF7S21210HR3 shares identical electrical specifications and functional characteristics. The primary distinction lies in packaging format; verify mechanical footprint compatibility with existing PCB layouts when substituting between reel and cut-tape variants.

FAQ

What is the maximum continuous wave output power capability?

The device is capable of handling 190 Watts CW output power at 32 Vdc and 2140 MHz.

How does the device handle voltage standing wave ratio variations?

It is capable of handling a 5:1 VSWR under specified operating conditions.

What is the typical adjacent channel power ratio performance?

Typical ACPR is -33 dBc measured at a 5 MHz offset within a 3.84 MHz channel bandwidth.