MRF7S21210HSR5

Overview

The MRF7S21210HSR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications operating between 2110 and 2170 MHz. It supports Class AB and Class C modulation formats with a drain-source voltage of 65 Vdc and gate-source voltage range from -6.0 to +10 Vdc. The device delivers 63 Watts average output power in single-carrier W-CDMA at 28 Volts, achieving 18.5 dB gain and 29% efficiency. It handles up to 190 Watts CW output power at the 1 dB compression point and withstands 5:1 VSWR at 32 Vdc.

Feature Summary

• Internally matched input and output networks for simplified circuit design
• Integrated electrostatic discharge (ESD) protection mechanisms
• Extended negative gate-source voltage range optimized for Class C operation
• Engineered compatibility with digital predistortion error correction systems

Applications

• CDMA base station power amplification
• Class AB cellular base station modulation processing
• Class C cellular base station modulation processing
• Digital predistortion linearization systems

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status prior to integration. Validate thermal management requirements against datasheet junction-to-case resistance specifications. Ensure handling procedures account for integrated ESD protection ratings during assembly.

Selection Notes

Evaluate thermal dissipation capabilities based on case temperature constraints. Verify impedance matching network compatibility with internal matching characteristics. Assess system linearity requirements against specified ACPR and IMD performance metrics. Confirm operational frequency alignment within the designated 2110 to 2170 MHz bandwidth.

Part Context

This lateral N-channel RF power MOSFET belongs to the MRF7S series developed by Freescale Semiconductor, now NXP Semiconductors. The component utilizes silicon technology housed in the NI-780S package. It represents a specialized solution for high-power radio frequency amplification in telecommunications infrastructure.

Replacement Considerations

MRF7S21210HR3

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage rating is 65 Vdc.

Does the device include internal matching networks?

Yes, the device features internally matched input and output circuits.

Is the component suitable for Class C operation?

Yes, it includes a greater negative gate-source voltage range specifically designed to improve Class C operation.