MRF7S24250NR3

Overview

The MRF7S24250NR3 is an RF power LDMOS transistor manufactured by NXP Semiconductors, originally developed under the Freescale Semiconductor brand. This n-channel enhancement-mode lateral MOSFET is designed for broadband applications operating between 2400 MHz and 2500 MHz. It delivers a typical output power of 250 W with high efficiency at a drain voltage of 32 V. The device features internal matching for ease of integration into push-pull configurations.

Feature Summary

• Internally matched for simplified circuit design
• Qualified for operation up to 32 Vdc drain voltage
• Integrated ESD protection for enhanced reliability
• Designed specifically for push-pull amplifier topologies

Applications

• Base station amplifiers in cellular infrastructure
• Broadband RF power amplification systems
• Pulsed signal processing equipment

Procurement Notes

Verify the manufacturer designation as NXP Semiconductors, as Freescale Semiconductor was acquired. Confirm the specific suffix NR3 indicates the tape and reel packaging configuration. Ensure the datasheet revision matches the required technical specifications for your design implementation.

Selection Notes

Select this component for designs requiring high linearity and power density in the 2.4 GHz band. Consider thermal management requirements due to the high power dissipation. Verify compatibility with existing bias networks and impedance matching circuits intended for 32 V operation.

Part Context

This part belongs to the MRF7S series of RF power transistors. These devices are engineered for demanding wireless communication environments. The series emphasizes robust performance and thermal stability for continuous or pulsed duty cycles in professional RF equipment.

Replacement Considerations

Consult official substitution guides for compatible alternatives within the same family. Verify pinout and electrical parameter equivalence before replacing.