MRF7S27130HR5

Overview

The MRF7S27130HR5 is an N-channel enhancement-mode lateral MOSFET designed for WiMAX base station applications up to 2700 MHz. It operates at a drain-source voltage of 65 Vdc and supports case temperatures up to 150 °C with junction temperatures reaching 225 °C. The device delivers 23 W average output power in the 2500-2700 MHz band, achieving a typical power gain of 16.5 dB and drain efficiency of 20%. It features internal input and output matching, integrated ESD protection, and RoHS compliance.

Feature Summary

• Internally matched for ease of use
• Integrated ESD protection
• Greater negative gate-source voltage range for improved Class C operation

Applications

• WiMAX base station amplifiers
• WiBro amplifier applications
• BWA amplifier applications
• OFDM multicarrier Class AB and Class C amplifier applications

Procurement Notes

Verify the specific ordering suffix R5 against official documentation to confirm tape and reel specifications. Confirm that the component meets all required environmental standards and functional safety certifications before finalizing procurement decisions. Ensure compatibility with existing thermal management systems.

Selection Notes

Select this component for designs requiring high linearity and efficiency in the S-band frequency range. Consider its internal matching capabilities to simplify circuit design. Evaluate thermal resistance characteristics to ensure adequate heat dissipation under maximum operating conditions. Verify impedance parameters for optimal network matching.

Part Context

This part belongs to the MRF7S27130H family of RF power lateral MOSFETs manufactured by Freescale Semiconductor (now NXP). These devices are specifically engineered for wireless communication infrastructure, providing robust performance in demanding RF environments while maintaining reliability over extended operational lifetimes.

Replacement Considerations

MRF7S27130HR3

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225 °C.

Does the device include internal matching networks?

Yes, the device is internally matched on both input and output for ease of use.

What is the typical power gain at 2700 MHz?

The typical power gain is 16.5 dB when operating at 28 Vdc with 23 W average output power.