MRF7S38010HR3

Overview

The MRF7S38010HR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for WiMAX base station applications up to 3800 MHz. It supports Class AB and Class C amplifier configurations for OFDM multicarrier signals. Key electrical parameters include a Drain-Source Voltage (VDS) of -0.5 to +65 Vdc, Gate-Source Voltage (VGS) of -6.0 to +10 Vdc, and Operating Voltage (VDD) of 32 Vdc. The device operates within a storage temperature range of -65 to +150 °C and a junction temperature up to 225 °C. Thermal resistance from junction to case ranges from 2.05 to 2.24 °C/W depending on operating conditions.

Feature Summary

• Internally matched input and output networks for simplified circuit design
• Integrated electrostatic discharge (ESD) protection mechanisms
• Extended negative gate-source voltage range optimized for Class C operation
• Characterized using series equivalent large-signal impedance parameters

Applications

• WiMAX base station amplifiers
• WiBro and BWA system implementations
• OFDM multicarrier amplifier designs
• Class AB and Class C radio frequency power stages

Procurement Notes

Verify the specific ordering suffix against current manufacturer documentation to confirm packaging configuration. The R3 suffix indicates tape and reel delivery containing 250 units per 32 mm, 13-inch reel. Confirm RoHS compliance status and ensure the component meets all environmental specifications required for the intended deployment environment before finalizing procurement orders.

Selection Notes

Select this component for high-frequency broadband applications requiring internal matching capabilities. Ensure the design accommodates the specified thermal resistance values and maximum junction temperature limits. Verify that the biasing network supports the required gate-source voltage range for optimal Class AB or Class C performance characteristics in the target frequency band.

Part Context

This device belongs to the RF Power Field Effect Transistor family manufactured by Freescale Semiconductor, now part of NXP Semiconductors. It utilizes lateral MOSFET technology specifically engineered for wireless communication infrastructure. The product line targets demanding broadband requirements with integrated features to reduce external component count and simplify amplifier topology implementation.

Replacement Considerations

Consult official manufacturer substitution lists for verified alternatives. Cross-reference pinout compatibility and thermal characteristics when evaluating potential replacements to ensure seamless integration into existing hardware architectures without redesigning the matching network.

FAQ

What is the maximum drain-source voltage rating?

The maximum Drain-Source Voltage (VDS) rating is +65 Vdc.

Is the device internally matched?

Yes, the MRF7S38010HR3 is internally matched on both the input and output ports.

What is the typical power gain at 3400-3600 MHz?

The typical power gain is 15 dB under standard WiMAX test conditions.