MRF7S38010HR5

MRF7S38010HR5

$39.53
  • Description:RF MOSFET LDMOS 30V NI400
  • Series:-

SKU:2d779ecc8078 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V NI400
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:3.4GHz ~ 3.6GHz
  • Gain:15dB
  • Voltage - Test:30 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:160 mA
  • Power - Output:2W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-400-240
  • Supplier Device Package:NI-400-240
  • Configuration:-

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MRF7S38010HR5

Overview

The MRF7S38010HR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for WiMAX base station applications with frequencies up to 3800 MHz. It supports OFDM multicarrier Class AB and Class C amplifier applications. The device features internal matching for ease of use, integrated ESD protection, and a greater negative gate-source voltage range for improved Class C operation. It is RoHS compliant and supplied in tape and reel packaging.

Feature Summary

  • Designed for WiMAX base station applications with frequencies up to 3800 MHz
  • Internally matched for ease of use
  • Integrated ESD protection
  • Greater negative gate-source voltage range for improved Class C operation

Applications

  • WiMAX base station applications
  • WiBro applications
  • BWA applications
  • OFDM multicarrier Class AB amplifier applications
  • OFDM multicarrier Class C amplifier applications

Procurement Notes

Verify the exact ordering suffix against official documentation, as variations such as R3 or SR3 indicate specific reel quantities and packaging formats. Confirm that the component meets all required environmental and safety standards for your intended deployment. Ensure compatibility with existing thermal management solutions given the specified operating junction temperature limits.

Selection Notes

Select this component for designs requiring high-frequency RF power amplification in the WiMAX band. Consider its internal matching capabilities to simplify circuit design. Evaluate the thermal resistance characteristics to ensure adequate heat dissipation. Verify that the maximum ratings align with the system's operational voltage and current requirements.

Part Context

This part belongs to the family of RF Power Field Effect Transistors from Freescale Semiconductor (now NXP). These devices are lateral N-channel MOSFETs specifically engineered for radio frequency power applications. They are characterized by their ability to handle high power levels while maintaining efficiency and linearity in demanding communication systems.

Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout and electrical specifications match before replacing.

MRF7S38010HR5MRF7S38010HR5
$39.53
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