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Product Detailed Parameters
- Description：RF MOSFET LDMOS 30V NI400
- Series：-
- Mfr：Freescale Semiconductor
- Package：Bulk
- Technology：LDMOS
- Frequency：3.4GHz ~ 3.6GHz
- Gain：15dB
- Voltage - Test：30 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：160 mA
- Power - Output：2W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：NI-400S-2S
- Supplier Device Package：NI-400S-2S
- Configuration：-
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Overview
The MRF7S38010HSR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for WiMAX base station applications with frequencies up to 3800 MHz. It supports Class AB and Class C amplifier operations for WiMAX, WiBro, BWA, and OFDM multicarrier signals. The device operates at a drain-source voltage of 65 Vdc and features integrated ESD protection. Electrical characteristics include a typical power gain of 15 dB and drain efficiency of 17% under standard test conditions.
Feature Summary
- Internally matched input and output networks for ease of use
- Integrated electrostatic discharge (ESD) protection
- Extended negative gate-source voltage range for improved Class C operation
Applications
- WiMAX base station amplifiers
- WiBro systems
- BWA applications
- OFDM multicarrier Class AB and Class C amplifiers
Procurement Notes
Verify the exact suffix against official documentation, as datasheets reference HR3 and HSR3 variants. Confirm RoHS compliance status and check for availability updates from NXP Semiconductors or authorized distributors. Ensure ordering specifications match the required reel packaging quantities.
Selection Notes
Select this component for broadband RF applications requiring high linearity and ruggedness in the 3400-3600 MHz band. Consider thermal management requirements due to the maximum junction temperature rating. Validate impedance matching networks using the provided series equivalent large-signal impedance parameters for optimal performance.
Part Context
This lateral N-channel MOSFET belongs to the Freescale Semiconductor RF Power Field Effect Transistor family. It is specifically engineered for commercial and industrial broadband applications. The device utilizes silicon technology and is housed in a surface-mount package suitable for automated assembly processes.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter alignment before replacing existing components in established designs.
