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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V NI780
- Series：-
- Mfr：Freescale Semiconductor
- Package：Bulk
- Technology：LDMOS
- Frequency：2.17GHz
- Gain：14.4dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：150 mA
- Power - Output：16W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：NI-780-4
- Supplier Device Package：NI-780-4
- Configuration：Dual
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Overview
The MRF8HP21080HR5 is an RF LDMOS power transistor manufactured by Freescale Semiconductor. It features a dual-channel configuration housed in an NI-780-4 package. The device operates with a test voltage of 28 V and a test current of 150 mA. It delivers an output power of 16 W at a frequency of 2.17 GHz, providing a gain of 14.4 dB. This component is designed for high-performance radio frequency applications requiring robust power handling capabilities.
Feature Summary
- Dual-channel LDMOS architecture for enhanced power performance
- Optimized for operation at 2.17 GHz frequency
- High output power capability of 16 W
Applications
- Radio frequency power amplification
- Base station transmitter modules
- Wireless communication infrastructure
Procurement Notes
Verify the specific datasheet version and manufacturer documentation to confirm electrical characteristics and pinout compatibility before integration. Ensure that the NI-780-4 package dimensions align with your PCB layout requirements. Cross-reference the part number with official NXP/Freescale records to validate authenticity and technical specifications against the provided parameters.
Selection Notes
Select this component when a dual-channel LDMOS solution is required for 2.17 GHz applications. Consider the 16 W output power and 14.4 dB gain metrics relative to system efficiency needs. Evaluate the thermal management requirements associated with the NI-780-4 package to ensure reliable operation under continuous load conditions.
Part Context
This device belongs to the RF FETs and MOSFETs category from Freescale Semiconductor. It is classified as an obsolete product within the manufacturer's catalog. The technology utilizes LDMOS construction, which is standard for high-power RF applications. The dual-channel design distinguishes it from single-channel counterparts in the same family.
Replacement Considerations
As the MRF8HP21080HR5 is listed as obsolete, direct substitutes may not be available. Consult the manufacturer's obsolescence notice or contact authorized distributors for potential last-time buys or recommended alternative series with compatible electrical specifications.
