MRF8HP21130HR5

Overview

The MRF8HP21130HR5 is an RF power N-channel MOSFET manufactured by Freescale Semiconductor, utilizing LDMOS technology. It operates at a frequency of 2.17 GHz with a gain of 14 dB. The device is rated for a test voltage of 28 V and a test current of 360 mA. It delivers an output power of 28 W. The component is housed in the NI-780-4 package and complies with RoHS standards.

Feature Summary

• N-channel LDMOS construction for high-frequency RF applications
• Designed for operation at 2.17 GHz with specified gain characteristics
• Robust power handling capability at 28 V supply conditions

Applications

• RF power amplification in wireless communication systems
• Base station transmitter modules
• High-frequency signal processing circuits

Procurement Notes

Verify the specific datasheet version from Freescale Semiconductor to confirm electrical parameters and thermal characteristics. Ensure the NI-780-4 package footprint matches the design requirements. Check for RoHS compliance documentation if environmental regulations apply. Confirm active status through official manufacturer channels before procurement.

Selection Notes

Select this component for applications requiring 28 W output power at 2.17 GHz. Consider the 28 V operating voltage and 360 mA test current when designing biasing networks. Evaluate thermal management solutions suitable for the NI-780-4 package. Compare gain specifications against system requirements to ensure adequate signal amplification.

Part Context

This part belongs to the MRF8HP series of RF power transistors from Freescale Semiconductor. These devices are engineered for high-efficiency performance in demanding RF environments. The series typically supports various frequency bands and power levels, catering to diverse telecommunications infrastructure needs.

Replacement Considerations

No direct substitute part numbers are confirmed in the provided data.