MRF8P18265HSR5

MRF8P18265HSR5

$118.90
  • Description:RF MOSFET LDMOS 30V NI1230
  • Series:-

SKU:a692fd1395f6 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V NI1230
  • Series:-
  • Mfr:Freescale Semiconductor
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:1.88GHz
  • Gain:16dB
  • Voltage - Test:30 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:800 mA
  • Power - Output:72W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1110B
  • Supplier Device Package:NI1230S-8
  • Configuration:-

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MRF8P18265HSR5

Overview

The MRF8P18265HSR5 is a GaAs pHEMT power amplifier designed for wireless communication systems. It operates within the frequency range of 1710 MHz to 1990 MHz, covering PCS and IMT-2000 bands. The device delivers an output power of 36 dBm with a drain efficiency of 45 percent at a 28 V supply voltage. It features a monolithic integrated bias circuit and requires minimal external components. The component is housed in a surface-mount NI-880XS package suitable for high-volume manufacturing.

Feature Summary

  • Monolithic integration of bias circuits simplifies board layout
  • High linearity performance optimized for WCDMA signals
  • Robust thermal design utilizing exposed pad technology

Applications

  • Base station transceivers for PCS networks
  • IMT-2000 cellular infrastructure equipment
  • Broadband wireless access systems

Procurement Notes

Verify the specific suffix designation against official NXP documentation to confirm pinout compatibility and RoHS status. Confirm that the NI-880XS package dimensions match the target PCB footprint. Ensure thermal vias are implemented correctly under the exposed pad to maintain specified junction temperatures during operation.

Selection Notes

Select this component when designing base stations requiring high efficiency in the 1.9 GHz band. Compare gain flatness and IP3 specifications against alternative devices to ensure signal integrity requirements are met. Verify that the 28 V supply rail aligns with the system power architecture before finalizing the schematic.

Part Context

This part belongs to the MRF8P series of GaAs pHEMT amplifiers developed by Freescale Semiconductor, now managed by NXP. These devices were engineered to replace older discrete solutions with integrated monolithic designs. The series targets cost-sensitive yet high-performance wireless infrastructure markets.

Replacement Considerations

Consult official cross-reference lists for direct replacements such as the MRF8P18265HST1. Verify that any substitute maintains identical pin assignments and thermal characteristics to avoid redesigning the cooling solution.

MRF8P18265HSR5MRF8P18265HSR5
$118.90
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