MRF8P18265HSR6

Overview

The MRF8P18265HSR6 is an RF LDMOS power transistor designed for the 1800 and 1900 MHz frequency bands. It delivers ultra-high output levels required for Doherty-type, multi-carrier power amplifiers (MCPAs) used in wireless base station transceivers. This component allows a single amplifier to handle multiple carriers, thereby decreasing the size and component count of end products compared to traditional designs requiring one amplifier per carrier.

Feature Summary

• Delivers ultra-high output levels suitable for demanding RF applications
• Optimized for use in Doherty-type multi-carrier power amplifiers
• Enables reduction in system size and component count by supporting multi-carrier operation

Applications

• Wireless base station transceivers
• Multi-carrier power amplifiers (MCPAs)
• Doherty-type amplifier architectures

Procurement Notes

Verify the specific suffix 'SR6' against official NXP documentation to confirm package type and environmental compliance status. Confirm current manufacturing status as this product line may be subject to change or discontinuation. Ensure compatibility with existing base station infrastructure requirements before procurement.

Selection Notes

Select this component when designing MCPAs for 1800/1900 MHz bands requiring high output power. It is appropriate for scenarios aiming to reduce physical footprint and part count by consolidating multiple carrier amplification into a single device architecture.

Part Context

This part belongs to Freescale Semiconductor's RF LDMOS power transistor portfolio, now under NXP. It represents a high-performance segment focused on increasing coverage and capacity of existing base stations without dedicating separate amplifiers per carrier.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.