MRF8P20100HR3

Description：RF MOSFET LDMOS 28V NI780
Series：-

SKU:67e34f92e575 Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 28V NI780
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：2.03GHz
Gain：16dB
Voltage - Test：28 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：400 mA
Power - Output：20W
Voltage - Rated：65 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：NI-780-4
Supplier Device Package：NI-780-4
Configuration：Dual

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MRF8P20100HR3

Overview

The MRF8P20100HR3 is an RF LDMOS FET manufactured by NXP USA Inc., designed for base station applications. It operates at a frequency of 2.03 GHz with a gain of 16 dB. The device features a dual configuration and requires a test voltage of 28 V and a test current of 400 mA. Its maximum rated voltage is 65 V, and it delivers an output power of 20 W average. The component utilizes the NI-780-4 package and is currently in an obsolete product status.

Feature Summary

Utilizes LDMOS technology for high-frequency RF performance
Designed specifically for CDMA and GSM EDGE base station applications
Features a dual configuration within the NI-780-4 package

Applications

CDMA base station systems operating between 1805 MHz and 2025 MHz
GSM EDGE base station infrastructure
RF power amplification in cellular communication networks

Procurement Notes

Verify component authenticity through authorized distributors due to obsolete status. Confirm package integrity and pin alignment against the NI-780-4 specification before integration. Check for moisture sensitivity level compliance if storage conditions were not strictly controlled. Ensure replacement strategies are evaluated as this specific part number is no longer in active production by the manufacturer.

Selection Notes

Select this component only for legacy designs requiring 20 W average output at 2.03 GHz. Consider thermal management requirements associated with LDMOS devices in base station environments. Evaluate alternative NXP series parts if new design-in opportunities exist, given the obsolete status. Ensure system impedance matching aligns with the device's RF characteristics for optimal gain and efficiency.

Part Context

This RF MOSFET belongs to the MRF8 family of LDMOS transistors from NXP USA Inc. These components are engineered for robust performance in wireless communication infrastructure. The MRF8P20100HR3 specifically targets the 1.9 GHz band, serving as a critical active element in power amplifier modules for mobile network base stations.