MRF8P20100HSR3

Overview

The MRF8P20100HSR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications from 1880 to 2025 MHz and GSM EDGE applications from 1805 to 1880 MHz. It supports Class AB and Class C operation. Typical Doherty single-carrier W-CDMA performance at 20 Watts average output power includes a gain of 16.0 dB, drain efficiency of 44.3%, and ACPR of -33.5 dBc at 2025 MHz. For GSM EDGE, it delivers 42 Watts average output power with approximately 43% drain efficiency.

Feature Summary

• Production tested in a symmetrical Doherty configuration
• Internally matched for ease of use
• Integrated ESD protection
• Designed for digital predistortion error correction systems

Applications

• CDMA base station amplifiers
• GSM EDGE base station amplifiers
• Doherty amplifier configurations
• Digital predistortion systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The R3 suffix indicates tape and reel packaging containing 250 units per 56 mm reel. Ensure compatibility with RoHS compliance requirements as specified in the datasheet. Confirm thermal management solutions align with the junction-to-case thermal resistance characteristics provided.

Selection Notes

Select this component for high-power cellular base station designs requiring internal matching and robust ESD protection. Evaluate thermal constraints carefully, as the device operates up to 225°C junction temperature. Consider the specific impedance parameters for carrier and peaking sides when designing Doherty architectures. Validate performance metrics under actual operating conditions rather than relying solely on typical values.

Part Context

This lateral N-channel RF power MOSFET belongs to Freescale's portfolio of devices optimized for cellular infrastructure. It utilizes advanced silicon technology to deliver high linearity and efficiency in broadband applications. The internal matching network simplifies circuit design by reducing external component count. It serves as a critical active element in modern multi-standard base station power amplifiers.

Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-reference pinouts and thermal characteristics before implementation.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225°C.

Is the device internally matched?

Yes, the MRF8P20100HSR3 is internally matched on both input and output.

What ESD protection levels are guaranteed?

It guarantees Human Body Model Class 2, Machine Model Class A, and Charge Device Model Class IV.