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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V NI780
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：2.03GHz
- Gain：16dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：400 mA
- Power - Output：20W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：NI-780S-4L
- Supplier Device Package：NI-780S-4L
- Configuration：Dual
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Overview
The MRF8P20100HSR5 is a dual-channel LDMOS RF power transistor manufactured by NXP USA Inc. Designed for high-frequency applications, this component operates at a frequency of 2.03 GHz with a typical gain of 16 dB. It features a test voltage of 28 V and delivers an output power of 20 W. The device is housed in the NI-780S-4L package, which corresponds to the NI780H-4 form factor, and utilizes tape and reel packaging for automated assembly processes.
Feature Summary
- Dual-channel LDMOS architecture for balanced RF performance
- Optimized for high-frequency operation at 2.03 GHz
- Integrated thermal management via base-mount package design
Applications
- Industrial, Scientific, and Medical (ISM) equipment
- High-power RF amplifier stages
- Wireless communication infrastructure components
Procurement Notes
Verify component availability as the MRF8P20100HSR5 is listed as discontinued by major distributors. Confirm final specifications against the official NXP datasheet prior to integration, as legacy status may impact long-term supply chain stability and replacement part compatibility.
Selection Notes
Select this component for designs requiring dual-channel LDMOS performance at 2.03 GHz. Ensure the system supports the 28 V test voltage and 20 W output power requirements. Verify that the NI-780S-4L package footprint aligns with the PCB layout constraints and thermal dissipation needs of the target application.
Part Context
This part belongs to the MRF8 series of RF transistors from NXP, specifically engineered for robust RF power amplification. The MRF8P20100HSR5 variant distinguishes itself through its dual configuration and specific frequency tuning, catering to specialized industrial and scientific radio frequency applications where high linearity and power density are critical.
Replacement Considerations
No public confirmed substitute part numbers are available. Due to the discontinued status, engineers must evaluate alternative dual-channel LDMOS devices from NXP or other manufacturers that match the 2.03 GHz frequency and 20 W power specifications.
