MRF8P20140WGHSR3

Overview

The MRF8P20140WGHSR3 is an RF FET manufactured by NXP USA Inc. designed for surface mount applications in the NI-780S-4L package. It features a rated voltage of 65 V and delivers an output power of 24 W. The device operates with a test current of 500 mA. This component is classified under RF FETs and MOSFETs, providing specific electrical characteristics suitable for radio frequency circuit implementations.

Feature Summary

• Surface mount construction within the NI-780S-4L package
• Rated for 65 V operation
• Delivers 24 W output power
• Test current specification of 500 mA

Applications

• Radio frequency power amplification
• RF signal generation circuits
• Wireless communication transmitters

Procurement Notes

Verify the exact package designation NI-780S-4L against schematic footprints to ensure mechanical compatibility. Confirm that the 65 V rating aligns with the system's maximum supply voltage requirements. Validate the 24 W output power capability against thermal management constraints in the final assembly. Ensure the manufacturer is identified as NXP USA Inc. to match the specified part number exactly.

Selection Notes

Select this component when a surface mount RF FET with a 65 V rating is required. The 24 W output power defines the performance ceiling for the application. The NI-780S-4L package dictates the board layout and soldering process. Consider the 500 mA test current for biasing network design. This part is suitable for designs prioritizing compact surface mount integration over through-hole alternatives.

Part Context

This device belongs to the category of RF FETs and MOSFETs produced by NXP USA Inc. It serves as a discrete semiconductor solution for high-frequency applications. The classification indicates its role in amplifying radio frequency signals. The specific model distinguishes it from other variants by its voltage and power ratings.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.