MRF8P20140WHSR3

Overview

The MRF8P20140WHSR3 is a lateral N-channel RF power MOSFET designed for CDMA base station applications. It operates within the frequency range of 1880 to 2025 MHz, delivering an average output power of 24 W at a test voltage of 28 V. The device features a gain of 16 dB and a rated voltage of 65 V. Packaged in the NI-780S-4L surface-mount format, it supports frequencies up to 1.91 GHz with a test current of 500 mA.

Feature Summary

• Single lateral N-channel RF power MOSFET architecture
• Optimized for CDMA base station operations
• Surface-mount packaging for automated assembly

Applications

• CDMA base station power amplification
• W-CDMA signal processing stages
• RF power generation modules

Procurement Notes

Verify component authenticity through authorized NXP distributors. Confirm package integrity upon receipt. Check datasheet revisions for parameter updates. Ensure ESD handling protocols are followed during storage and installation. Validate compatibility with existing board layouts before integration.

Selection Notes

Evaluate thermal management requirements for the NI-780S-4L package. Consider frequency stability needs within the 1880-2025 MHz band. Assess power supply constraints against the 28 V test voltage specification. Review gain requirements relative to the 16 dB performance metric. Ensure design accommodates the obsolete status implications.

Part Context

This component belongs to NXP's MRF series of RF power transistors. It utilizes LDMOS technology for high-linearity performance. The part is designated for wireless communication infrastructure. It replaces earlier generations in specific frequency bands. The series emphasizes reliability in base station environments.

Replacement Considerations

Public confirmed substitute part numbers: MRF8P20140WH, MRF8P20140WHR3.