MRF8P20165WHR3

Overview

The MRF8P20165WHR3 is an N-channel enhancement-mode lateral MOSFET designed for base station applications requiring wide instantaneous bandwidth from 1880 to 2025 MHz. It delivers 37 Watts average output power in single-carrier W-CDMA configurations at 28 Volts drain supply. The device supports symmetrical Doherty topologies and handles 10:1 VSWR with 173 Watts CW output power. Key electrical parameters include a typical gain of 16.3 dB, drain efficiency up to 47.7%, and a broadband resonance point of approximately 100 MHz.

Feature Summary

• Designed for wide instantaneous bandwidth applications covering frequencies from 1880 to 2025 MHz
• Production tested in a symmetrical Doherty configuration for guaranteed output power capability
• Internally matched input and output circuits for ease of use
• Integrated ESD protection with enhanced negative gate-source voltage range for improved Class C operation

Applications

• Base station amplifiers with wide instantaneous bandwidth requirements
• Symmetrical Doherty amplifier configurations
• Digital predistortion error correction systems
• Single-carrier W-CDMA signal processing

Procurement Notes

Verify the specific package style required for the application. The R3 suffix indicates tape and reel packaging options with varying widths. Confirm RoHS compliance status and ensure the ordering suffix matches the desired reel specifications before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high linearity and efficiency in wideband cellular infrastructure. Ensure the thermal management system can handle junction temperatures up to 225°C. Verify that the biasing circuitry supports the specified quiescent current and gate voltage ranges for optimal performance.

Part Context

This part belongs to the RF Power Field Effect Transistor family manufactured by Freescale Semiconductor. It utilizes Lateral DMOS technology optimized for high-power RF applications. The device is characterized using large-signal load-pull parameters and common source S-parameters to ensure consistent performance across production batches.

Replacement Considerations

MRF8P20165WHSR3

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225°C.

How does the device handle impedance mismatches?

It is capable of handling 10:1 VSWR at 32 Vdc and 1960 MHz, delivering 173 Watts CW output power with 2 dB input overdrive.

Is the device internally matched?

Yes, the MRF8P20165WHR3 features internal matching on both the input and output ports.