MRF8P20165WHR5

Overview

The MRF8P20165WHR5 is an N-channel enhancement-mode lateral MOSFET designed for base station applications requiring wide instantaneous bandwidth from 1880 to 2025 MHz. It delivers 37 watts average output power at 28 volts drain supply with a typical drain efficiency of 47 percent at 1960 MHz. The device supports 10:1 VSWR handling and features internal matching, ESD protection, and RoHS compliance.

Feature Summary

• Designed for wide instantaneous bandwidth applications
• Internally matched for ease of use
• Integrated ESD protection
• Greater negative gate-source voltage range

Applications

• Base station amplifiers
• Doherty single-carrier W-CDMA systems
• Digital predistortion error correction systems

Procurement Notes

Verify the R5 suffix indicates a specific tape and reel configuration distinct from standard packaging options. Confirm the component matches the original Freescale Semiconductor specifications before integration into production designs.

Selection Notes

Select this component for designs requiring high linearity and wideband performance in cellular infrastructure. Ensure thermal management meets junction temperature limits and bias circuits support the specified quiescent current requirements.

Part Context

This part belongs to the RF Power Field Effect Transistor family optimized for wireless communication infrastructure. It utilizes lateral MOSFET technology to provide robust performance in linear amplifier configurations within modern base station architectures.

Replacement Considerations

MRF8P20165WHR3

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225 degrees Celsius.

Does the device require external input and output matching networks?

No, the device is internally matched for ease of use.

Is the component compliant with environmental regulations?

Yes, the component is RoHS compliant.