MRF8P20165WHSR3

Overview

The MRF8P20165WHSR3 is an N-channel enhancement-mode lateral MOSFET designed for base station applications requiring wide instantaneous bandwidth from 1880 to 2025 MHz. It delivers 37 W average output power in single-carrier W-CDMA configurations at 28 V drain voltage. The device supports symmetrical Doherty topologies and handles 10:1 VSWR with 173 W CW output. Key electrical parameters include a maximum drain-source voltage of 65 V, operating junction temperature up to 225 °C, and thermal resistance ranging from 0.53 to 0.79 °C/W depending on case temperature.

Feature Summary

• Designed for wide instantaneous bandwidth applications covering frequencies from 1880 to 2025 MHz
• Production tested in a symmetrical Doherty configuration for guaranteed output power capability
• Internally matched input and output circuits for ease of use
• Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation

Applications

• Base station applications with wide instantaneous bandwidth requirements
• Symmetrical Doherty amplifier configurations
• Digital predistortion error correction systems

Procurement Notes

Verify the specific suffix SR3 indicates the NI-780S-4 package style with 32 mm tape width and 13-inch reel containing 250 units. Confirm RoHS compliance status as documented in the official datasheet. Ensure ordering specifications match the required packaging option before procurement.

Selection Notes

Select this component for designs requiring internal matching and high linearity in wideband scenarios. The device is characterized for large-signal load-pull parameters and common source S-parameters. Verify that the system can support the required 28 V supply and 550 mA quiescent current for optimal performance.

Part Context

This lateral RF power MOSFET belongs to the Freescale Semiconductor portfolio, now part of NXP USA Inc. It is specifically engineered for wireless infrastructure amplifiers. The device utilizes a Case 465H-02 package style and is manufactured under the MRF8P series designation for high-power RF applications.

Replacement Considerations

The MRF8P20165WHR3 is the alternative version utilizing the NI-780-4 package style with 56 mm tape width. Both variants share identical electrical characteristics and are functionally interchangeable regarding circuit performance.

FAQ

What is the typical drain efficiency at 1960 MHz?

The typical drain efficiency at 1960 MHz is 47.7% under standard test conditions.

Can the device handle high VSWR conditions?

Yes, it is capable of handling 10:1 VSWR at 32 Vdc and 1960 MHz, delivering 173 Watts CW output power.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225 °C.