MRF8P23080HR3

Overview

The MRF8P23080HR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for W-CDMA and LTE base station applications operating from 2300 to 2620 MHz. It supports Class AB and Class C operation with a drain-source voltage of 65 Vdc and operating voltage up to 32 Vdc. Typical performance at 28 Vdc includes 16 Watts average output power, 14.6 dB gain, and 42% drain efficiency at 2300 MHz. The device features internal matching, ESD protection, and RoHS compliance.

Feature Summary

• Designed for symmetrical Doherty configurations in cellular base stations
• Internally matched input and output circuits for ease of use
• Integrated electrostatic discharge (ESD) protection
• Optimized for digital predistortion error correction systems

Applications

• W-CDMA single-carrier base station amplifiers
• LTE base station power amplification
• Class AB and Class C cellular modulation formats

Procurement Notes

Verify the specific ordering suffix (R3 or HSR3) against the required tape and reel specifications. Confirm that the component status aligns with current manufacturing availability as product lifecycles may change. Ensure compatibility with existing thermal management designs given the junction temperature ratings.

Selection Notes

Select this component for wide instantaneous bandwidth requirements covering 2300 to 2620 MHz. Consider its capability to handle high peak-to-average ratios and its suitability for Doherty amplifier topologies requiring precise load-pull impedance matching.

Part Context

This part belongs to the MRF8P series of RF power field effect transistors manufactured by Freescale Semiconductor, now NXP USA Inc. These devices are lateral N-channel enhancement-mode MOSFETs specifically engineered for high-power wireless infrastructure applications.

Replacement Considerations

MRF8P23080HSR3 serves as the alternative package variant within the same electrical specification family.