MRF8P23080HSR5

MRF8P23080HSR5

$55.55
  • Description:RF MOSFET LDMOS 28V NI780
  • Series:-

SKU:250a3d0c1bcf Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V NI780
  • Series:-
  • Mfr:Freescale Semiconductor
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:2.3GHz
  • Gain:14.6dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:280 mA
  • Power - Output:16W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:NI-780S-4L
  • Supplier Device Package:NI-780S-4L
  • Configuration:Dual

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MRF8P23080HSR5

Overview

The MRF8P23080HSR5 is an N-channel LDMOS RF power transistor manufactured by Freescale Semiconductor. It operates within the 2300 to 2620 MHz frequency range, suitable for broadband applications. The device features a dual configuration and is designed for high-efficiency performance in wireless infrastructure. Key electrical parameters include a drain-source voltage of 28V, a continuous drain current of 280 mA, and a typical small-signal gain of 14.6 dB at 2.3 GHz. It utilizes the NI-780S-4L package technology.

Feature Summary

  • Designed for W-CDMA and LTE base station applications
  • Capable of operation in Class AB and Class C modes
  • Utilizes LDMOS technology for RF power amplification

Applications

  • W-CDMA base station power amplification
  • LTE base station signal processing
  • Broadband RF power amplification systems

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the specific suffix 'HSR5' matches the required package variant (NI-780S-4L) and thermal characteristics. Check for RoHS compliance status as indicated in official documentation, noting potential discrepancies in third-party listings. Ensure storage conditions meet semiconductor handling standards to prevent electrostatic discharge damage prior to installation.

Selection Notes

Select this component for designs requiring N-channel LDMOS performance in the 2.3 GHz band. Consider the 28V supply requirement and thermal management needs associated with the NI-780S-4L package. Evaluate compatibility with Class AB or Class C biasing networks. Verify that the 14.6 dB gain specification meets system link budget requirements. Assess physical footprint constraints against the specified package dimensions.

Part Context

This part belongs to the MRF8P series of RF power transistors from Freescale Semiconductor, now part of NXP Semiconductors. The series targets cellular infrastructure markets. The MRF8P23080HSR5 specifically addresses the 2300-2620 MHz spectrum. It represents a legacy product line where newer iterations may exist under updated naming conventions or package technologies within the same manufacturer portfolio.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Users should consult official NXP/Freescale replacement guides or contact technical support for cross-reference data regarding discontinued or obsolete components.

MRF8P23080HSR5MRF8P23080HSR5
$55.55
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