MRF8P23160WHSR3

Overview

The MRF8P23160WHSR3 is an N-channel enhancement-mode lateral MOSFET designed for base station applications requiring wide instantaneous bandwidth from 2300 to 2400 MHz. It delivers 30 Watts average output power at 28 Volts with a typical drain efficiency of 37.1% to 38.3%. The device supports 10:1 VSWR handling and achieves approximately 190 Watts at the 3 dB compression point. It features internal input matching, integrated ESD protection, and is characterized for digital predistortion systems.

Feature Summary

• Designed for wide instantaneous bandwidth applications covering frequencies from 2300 to 2400 MHz
• Internally matched for ease of use in symmetrical Doherty configurations
• Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
• Characterized with large-signal load-pull parameters and common source S-parameters

Applications

• Base station applications with wide instantaneous bandwidth requirements
• Digital predistortion error correction systems
• Wideband applications requiring 100 MHz signal bandwidth

Procurement Notes

Verify the specific ordering suffix R3 against current distributor availability to ensure correct packaging specifications. Confirm that the component matches the NI-780S-4 package style required for your design. Ensure all technical parameters are validated by your own testing before finalizing procurement decisions.

Selection Notes

Select this component when designing amplifiers for 2300-2400 MHz bands requiring high linearity and wide bandwidth. It is suitable for single-carrier W-CDMA signals with specific clipping characteristics. Consider its thermal resistance and operating junction temperature limits for proper heat dissipation planning in your system architecture.

Part Context

This part belongs to the Freescale Semiconductor RF Power Field Effect Transistors family. It is specifically engineered for LDMOS technology used in wireless communication infrastructure. The device represents a solution for modern cellular base stations needing robust performance under demanding signal conditions.

Replacement Considerations

MRF8P23160WHR3

FAQ

What is the maximum drain-source voltage rating?

The maximum Drain-Source Voltage (VDSS) rating is -0.5 to +65 Vdc.

Does the device require external input matching networks?

No, the device is internally matched for ease of use.

What is the typical gain at 2350 MHz?

The typical power gain (Gps) at 2350 MHz is 14.1 dB.