MRF8P26080HR3

Overview

The MRF8P26080HR3 is an LDMOS RF power transistor manufactured by NXP USA Inc. Designed for base station applications, it operates within the 2500 to 2700 MHz frequency range. The device features a dual configuration and utilizes the NI-780-4 package. It provides 14 W of average output power with a rated voltage of 28 V and a maximum rated voltage of 65 V.

Feature Summary

• Engineered specifically for W-CDMA and LTE base station architectures
• Capable of operation in Class AB and Class C amplifier modes
• Constructed using robust LDMOS technology for high reliability

Applications

• W-CDMA base station power amplification
• LTE base station signal transmission
• Class AB linear amplifier stages
• Class C non-linear amplifier configurations

Procurement Notes

Verify component authenticity through authorized NXP channels due to obsolete status. Confirm package integrity and pin alignment against NI-780-4 specifications. Ensure storage conditions remain within -65 to +150 °C to prevent moisture damage. Validate RoHS3 compliance documentation prior to integration into production lines.

Selection Notes

Select this component for designs requiring 14 W average power at 2500–2700 MHz. Consider thermal management requirements for base station environments. Evaluate compatibility with Class AB or Class C biasing schemes. Verify that the 28 V operating voltage aligns with system power supply constraints.

Part Context

Part of the MRF8 series, this device targets wireless infrastructure markets. It complements other NXP RF transistors offering varying power levels across cellular bands. The NI-780-4 package supports efficient heat dissipation for continuous wave operations in demanding telecom environments.

Replacement Considerations

No public confirmed substitute part numbers are available. The component status is listed as obsolete. Designers should consult NXP for current generation alternatives or evaluate legacy inventory availability.