MRF8P26080HSR5

Overview

The MRF8P26080HSR5 is a dual-channel lateral N-channel RF power MOSFET manufactured by NXP USA Inc. It operates at a frequency of 2.62 GHz with a rated voltage of 65 V and a test voltage of 28 V. The device delivers an output power of 14 W and provides a gain of 15 dB. Packaged in the NI-780S-4L surface mount format, it is supplied in tape and reel configuration. This component is currently discontinued.

Feature Summary

• Dual-channel LDMOS construction for balanced RF performance
• Optimized for high-frequency operation at 2.62 GHz
• Surface mount packaging for automated assembly integration

Applications

• W-CDMA base station transmitters
• LTE band amplification modules
• Broadband RF power amplification systems

Procurement Notes

Verify availability through authorized distributors as this part is marked discontinued. Confirm exact package variant NI-780S-4L compatibility with existing PCB footprints. Request official obsolescence notices or lifecycle status documentation from NXP to ensure long-term supply chain stability before finalizing procurement plans.

Selection Notes

Select this component for applications requiring dual-channel RF amplification at 2.62 GHz. Ensure thermal management solutions support the 14 W output power capability. Compare electrical parameters against system requirements for 65 V rated voltage and 15 dB gain. Verify that the surface mount package aligns with manufacturing capabilities.

Part Context

This device belongs to the MRF8 series of RF power MOSFETs designed for cellular infrastructure. It utilizes lateral DMOS technology to achieve high linearity and efficiency. The dual-channel design allows for push-pull configurations in amplifier stages. It targets multi-standard wireless communication base stations.

Replacement Considerations

No public confirmed substitute part numbers are available. Consult NXP technical support for potential cross-reference options or next-generation replacements.