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Product Detailed Parameters
- Description：RF MOSFET LDMOS 30V NI1230
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：2.9GHz
- Gain：13.3dB
- Voltage - Test：30 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：100 mA
- Power - Output：320W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：NI-1230
- Supplier Device Package：NI-1230
- Configuration：Dual
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Overview
The MRF8P29300HR5 is an LDMOS RF power transistor manufactured by NXP USA Inc. It operates within the 2700 MHz to 2900 MHz frequency range, delivering a peak output power of 320 W at a maximum drain voltage of 30 V. Designed for robust performance in high-frequency applications, this component utilizes a lead-free package compliant with RoHS standards and includes integrated ESD protection features.
Feature Summary
- Integrated electrostatic discharge (ESD) protection
- Lead-free packaging compliant with RoHS specifications
- Capable of supporting both single-ended and push-pull configurations
Applications
- Wireless communication infrastructure
- Industrial, Scientific, and Medical (ISM) equipment
- Broadband radio transmitters
Procurement Notes
Verify the specific suffix 'R5' against official documentation to confirm reel quantity and tape specifications. Ensure compatibility with existing thermal management designs, as LDMOS devices require adequate heat dissipation. Confirm that the 30 V operating voltage aligns with the target system's power supply architecture before procurement.
Selection Notes
Select this component for applications requiring high peak power density in the 2.7 GHz to 2.9 GHz bands. The device is suitable for systems needing reliable linear or non-linear amplification. Consider the thermal resistance and package type when designing the printed circuit board layout to ensure optimal performance and longevity under continuous operation.
Part Context
This part belongs to NXP's portfolio of LDMOS RF power transistors designed for demanding wireless infrastructure environments. These components are engineered to provide high gain and efficiency across wide bandwidths. The technology supports scalable solutions for base stations and industrial heating systems requiring stable RF energy delivery.
Replacement Considerations
Consult official substitution guides for equivalent parts such as the MRF8P29300H. Verify pinout compatibility and electrical parameter overlaps before implementation.
