SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MRF8P8300HR6 is an RF LDMOS transistor designed for W-CDMA and LTE base station applications within the 790 to 820 MHz frequency range. It delivers a typical average output power of 96 W at a rated voltage of 28 V, with a gain of 20.9 dB. The device utilizes the NI-1230 package and supports Class AB and Class C operation modes for cellular infrastructure.
Verify that the specific suffix HR6 corresponds to the tape and reel packaging configuration when sourcing components. Confirm the manufacturer designation as NXP USA Inc. or NXP Semiconductors to ensure authenticity. Cross-reference the part number against official datasheets to validate the 96 W average power rating and 28 V operating voltage specifications before integration into design projects.
Select this component for designs requiring high efficiency and linearity in the 790–820 MHz spectrum. Ensure the thermal management system accommodates the power dissipation associated with 96 W output. Verify compatibility with the NI-1230 chassis mount footprint and confirm that the drive requirements align with the 20.9 dB gain characteristic for the intended amplifier topology.
This model belongs to the MRF8P series of RF power transistors from NXP, specifically engineered for telecommunications infrastructure. It shares architectural similarities with variants like the MRF8P8300HSR6 but differs in packaging and handling specifications. The series targets modern cellular standards requiring robust performance in compact form factors.
The MRF8P8300HSR6 serves as a verified alternative within the same product family, offering identical electrical characteristics for 790–820 MHz applications. Substitution requires verification of the package handling differences between the reel (HR6) and tray (HSR6) formats.