MRF8P9040NBR1

MRF8P9040NBR1

  • Description:RF MOSFET LDMOS 28V TO272-4
  • Series:-

SKU:3f11585cbb8b Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V TO272-4
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:960MHz
  • Gain:19.1dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:320 mA
  • Power - Output:4W
  • Voltage - Rated:70 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:TO-272BB
  • Supplier Device Package:TO-272 WB-4
  • Configuration:Dual

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MRF8P9040NBR1

Overview

The MRF8P9040NBR1 is an N-Channel Enhancement-Mode Lateral MOSFET from NXP Semiconductors, designed for RF power amplifier applications. It operates within a frequency range of 700 MHz to 1000 MHz and utilizes a TO-270BB package. The device delivers a typical output power of 40 W (46 dBm) with a gain of 19 dB when powered by a 28 V supply. Its static drain current is typically 312 mA, ensuring stable performance across the specified band.

Feature Summary

  • High power density capability suitable for compact high-power output requirements
  • Low on-resistance to minimize power loss and improve energy efficiency
  • Excellent thermal stability with negative temperature coefficient preventing thermal runaway
  • Superior linearity optimized for modern digital modulation systems

Applications

  • Wireless communication base station power amplifiers
  • Broadcasting transmitter systems
  • Radar system signal amplification
  • RF power amplifier modules in UHF bands

Procurement Notes

Verify the specific BR1 suffix against official NXP documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with ADS simulation models provided by the manufacturer for accurate circuit design validation before procurement.

Selection Notes

Select this component for designs requiring robust LDMOS performance in the 700-1000 MHz range. Consider its 28 V operating voltage and 40 W output capability when designing matching networks. Evaluate thermal management solutions due to high power density and ensure bias circuits support the typical 312 mA quiescent current.

Part Context

This part belongs to NXP's MRF series of RF power field-effect transistors. These devices are engineered using advanced LDMOS technology to provide high reliability and efficiency. The series is widely recognized in telecommunications infrastructure for its balance of gain, linearity, and power handling capabilities.

Replacement Considerations

Consult NXP datasheets for direct equivalents such as the MRF8P9210N or MRF8P9300HR6. Verify pinout compatibility and electrical parameter overlaps before substitution to ensure circuit integrity.

MRF8P9040NBR1MRF8P9040NBR1

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