MRF8P9210NR3

Overview

The MRF8P9210NR3 is an N-Channel RF MOSFET manufactured by NXP USA Inc. utilizing LDMOS technology. It operates at a frequency of 960 MHz with a test voltage of 28 V and a test current of 750 mA. The device provides 16.8 dB gain and delivers 63 W of average output power. Packaged in NI-780-4, it is designed for base station applications.

Feature Summary

• Single W-CDMA RF Power LDMOS Transistor
• High Average Output Power Capability
• Optimized for Base Station Applications

Applications

• W-CDMA Base Stations
• RF Power Amplification
• Wireless Communication Infrastructure

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm part status as obsolete when sourcing. Ensure packaging integrity matches NI-780-4 specifications. Cross-reference datasheet parameters against supplier documentation to validate performance characteristics before integration into design projects.

Selection Notes

Select this component for high-power RF amplification requiring 63 W average output at 960 MHz. Consider the NI-780-4 package for thermal management and mounting requirements. Evaluate compatibility with 28 V supply systems. Assess gain requirements against the 16.8 dB specification for system efficiency.

Part Context

Part of the MRF8 series from NXP Semiconductors, focusing on RF power transistors for wireless infrastructure. Designed to meet stringent linearity and efficiency standards for cellular base stations. Supports deployment in environments demanding reliable high-frequency operation.

Replacement Considerations

A2V09H300-04NR3 is a confirmed substitute part number for the MRF8P9210NR3. Verify electrical parameter alignment and mechanical footprint compatibility before implementation.