MRF8S18210WHSR3

Overview

The MRF8S18210WHSR3 is an N-channel RF MOSFET manufactured by NXP USA Inc. It operates at a frequency of 1.93GHz with a gain of 17.8dB. The device features a drain-source voltage rating of 65V and a test voltage of 30V, with a test current of 1.3A. It delivers an output power of 50W. The component utilizes the NI-880XS-2 GULL surface-mount package.

Feature Summary

• N-channel metal oxide semiconductor field effect transistor technology
• Surface mount installation type for automated assembly
• Enhancement mode operation capability

Applications

• Radio communications systems
• Broadband RF power amplification
• Aviation and defense radar applications

Procurement Notes

Verify component authenticity through authorized NXP distributors or certified partners. Confirm the specific NI-880XS-2 GULL package variant matches design requirements. Check for RoHS compliance status as indicated in official documentation. Ensure handling procedures align with ESD protection standards for sensitive RF semiconductor devices during storage and integration.

Selection Notes

Select this component for designs requiring high-frequency performance around 1.93GHz. Consider the 50W output power capability relative to thermal management constraints. Evaluate the 65V breakdown voltage against circuit supply requirements. Verify compatibility with the specified surface-mount footprint for PCB layout optimization.

Part Context

This part belongs to the MRF8S18210 family of RF power transistors designed for demanding radio frequency applications. It represents a silicon-based solution optimized for linear amplification tasks. The series supports various communication standards requiring robust signal integrity and power efficiency in compact form factors.

Replacement Considerations

MRF8S18210WHS is a related variant within the same product family. Verify pinout and electrical specifications before substitution.