MRF8S19260HSR6

MRF8S19260HSR6

$114.36
  • Description:RF MOSFET LDMOS 30V NI1230
  • Series:-

SKU:85eea19b44c4 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V NI1230
  • Series:-
  • Mfr:Freescale Semiconductor
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:1.99GHz
  • Gain:18.2dB
  • Voltage - Test:30 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.6 A
  • Power - Output:74W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:SOT-1110B
  • Supplier Device Package:NI1230S-8
  • Configuration:Dual

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MRF8S19260HSR6

Overview

The MRF8S19260HSR6 is an RF LDMOS power transistor designed for the 1800 and 1900 MHz frequency bands. It delivers ultra-high output levels required for Doherty-type, multi-carrier power amplifiers (MCPAs) used in wireless base station transceivers. This component allows a single amplifier to handle multiple carriers, thereby decreasing the size and component count of end products.

Feature Summary

  • Delivers high output power levels suitable for multi-carrier applications
  • Optimized for integration into Doherty-type power amplifier architectures
  • Designed to reduce system size and component count in base stations

Applications

  • Wireless base station transceivers
  • Multi-carrier power amplifiers (MCPAs)
  • Doherty-type power amplifier designs

Procurement Notes

Verify the specific suffix 'SR6' against official NXP/Freescale documentation to confirm tape-and-reel packaging specifications. Confirm current lifecycle status as distribution sources may list this part as obsolete or limited supply. Ensure the device matches the 1800/1900 MHz band requirements for your specific base station design.

Selection Notes

Select this component when designing MCPAs for GSM EDGE or similar systems operating in the 1800/1900 MHz bands. It is intended for use where high output power and carrier aggregation capabilities are required within a compact form factor. Compare with other MRF8S series devices for specific gain and efficiency trade-offs.

Part Context

This device belongs to Freescale's RF LDMOS power transistor portfolio, specifically engineered for wireless infrastructure. It complements other models like the MRF8S18260H/S by providing optimized performance for the 1900 MHz band, supporting the industry shift toward more efficient, multi-carrier base station architectures.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.

MRF8S19260HSR6MRF8S19260HSR6
$114.36
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