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The MRF8S19260HSR6 is an RF LDMOS power transistor designed for the 1800 and 1900 MHz frequency bands. It delivers ultra-high output levels required for Doherty-type, multi-carrier power amplifiers (MCPAs) used in wireless base station transceivers. This component allows a single amplifier to handle multiple carriers, thereby decreasing the size and component count of end products.
Verify the specific suffix 'SR6' against official NXP/Freescale documentation to confirm tape-and-reel packaging specifications. Confirm current lifecycle status as distribution sources may list this part as obsolete or limited supply. Ensure the device matches the 1800/1900 MHz band requirements for your specific base station design.
Select this component when designing MCPAs for GSM EDGE or similar systems operating in the 1800/1900 MHz bands. It is intended for use where high output power and carrier aggregation capabilities are required within a compact form factor. Compare with other MRF8S series devices for specific gain and efficiency trade-offs.
This device belongs to Freescale's RF LDMOS power transistor portfolio, specifically engineered for wireless infrastructure. It complements other models like the MRF8S18260H/S by providing optimized performance for the 1900 MHz band, supporting the industry shift toward more efficient, multi-carrier base station architectures.
Public confirmed substitute part numbers are not available in the provided source material.