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Product Detailed Parameters
- Description：RF MOSFET 28V NI780
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Frequency：2.17GHz
- Gain：18.3dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：700 mA
- Power - Output：24W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：SOT-957A
- Supplier Device Package：NI-780H-2L
- Configuration：N-Channel
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Overview
The MRF8S21100HSR5 is an NXP USA Inc. RF MOSFET LDMOS transistor designed for high-frequency applications. It operates within the 2.11GHz to 2.17GHz frequency range, delivering a power output of 23W with a gain of 15.9dB. The device is rated for a test voltage of 28V and a maximum drain current of 950 mA, with a breakdown voltage of 68V. Packaged in the NI-780S base-mount configuration, it complies with RoHS3 standards and carries an EAR99 classification.
Feature Summary
- Utilizes Lateral Double-Diffused Metal-Oxide-Semiconductor (LDMOS) technology for robust RF performance.
- Engineered for base station infrastructure requiring high linearity and efficiency.
- Features a nickel-plated lead frame for enhanced thermal dissipation and solderability.
Applications
- Base station power amplification
- Wireless communication infrastructure
- Broadband RF signal processing
Procurement Notes
Verify component authenticity through authorized NXP distributors due to end-of-life status. Confirm package integrity as the NI-780S requires specific mounting techniques. Check for moisture sensitivity level compliance prior to assembly. Ensure design compatibility with existing thermal management solutions. Validate regulatory certifications against current regional standards.
Selection Notes
Select this component for designs operating strictly within the 2.11GHz to 2.17GHz band. Consider the 28V supply requirement when designing bias circuits. Evaluate the 23W output capability against system load requirements. Assess the NI-780S footprint constraints during PCB layout. Compare thermal resistance specifications with available heatsinking options.
Part Context
This part belongs to the MRF6/MRF8 series of RF power transistors from NXP. These devices are widely used in telecommunications infrastructure. The MRF8S21100HSR5 specifically targets cellular base station sectors. It represents a mature technology node for reliable RF amplification.
Replacement Considerations
Public confirmed substitute part numbers: None identified in verified documentation. The component is listed as End of Life. Designers should consult NXP engineering for potential obsolescence management strategies or alternative family members with compatible pinouts and electrical characteristics.
