MRF8S21200HSR6

Overview

The MRF8S21200HSR6 is an N-channel enhancement-mode lateral MOSFET designed for W-CDMA and LTE base station applications operating between 2110 MHz and 2170 MHz. It supports Class AB and Class C modulation formats with a typical output power of 48 Watts average at 28 Volts drain supply and 1400 mA quiescent current. The device features internal matching, integrated ESD protection, and RoHS compliance.

Feature Summary

• Internally matched input and output networks for simplified circuit design
• Integrated electrostatic discharge (ESD) protection mechanisms
• Extended negative gate-source voltage range to enhance Class C operation capabilities
• Optimized for digital predistortion error correction systems

Applications

• W-CDMA cellular base station power amplification
• LTE cellular base station power amplification
• Digital predistortion linearization system integration

Procurement Notes

Verify the specific suffix configuration against the datasheet documentation to ensure correct packaging specifications. Confirm that the component meets all required environmental standards and regulatory compliance criteria before finalizing procurement decisions. Cross-reference the manufacturer's latest availability status to prevent ordering delays or discrepancies in the supply chain.

Selection Notes

Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values under continuous wave operation conditions. Ensure the biasing network accommodates the necessary gate threshold voltage ranges and quiescent current settings. Verify impedance matching networks align with the provided series equivalent large-signal impedance parameters for optimal performance across the designated frequency band.

Part Context

This component belongs to the RF Power Field Effect Transistor category manufactured by Freescale Semiconductor, now part of NXP USA Inc. It utilizes Lateral DMOS technology specifically engineered for high-power radio frequency applications in wireless communication infrastructure. The device represents a specialized solution for modern cellular base station architectures requiring high linearity and efficiency.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Do not assume functional equivalence with other models without explicit cross-reference data from the supplier.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage rating is +65 Vdc.

Does the device support digital predistortion systems?

Yes, the device is explicitly designed for use with digital predistortion error correction systems.

What is the operating frequency range?

The device operates within the frequency range of 2110 MHz to 2170 MHz.