MRF8S23120HR3

Overview

The MRF8S23120HR3 is an NXP USA Inc. RF power MOSFET designed for L-band applications. It operates within the 2300-2400 MHz frequency range and delivers a continuous wave (CW) output power of 120 W at a supply voltage of 28 V. The device utilizes silicon technology in a ceramic metal-sealed cofired flatpack package, specifically CASE 465A-06, featuring two pins with the source connected to the case. It is compliant with RoHS standards and functions as a single enhancement-mode N-channel transistor.

Feature Summary

• High-power L-band RF performance optimized for cellular base station infrastructure
• Robust ceramic metal-sealed construction ensuring high reliability in demanding environments
• Integrated source connection to the case for efficient thermal dissipation

Applications

• Cellular base station power amplification
• Broadband RF signal generation
• Industrial radio frequency heating systems

Procurement Notes

Verify the specific ordering suffix against official NXP documentation to confirm exact mechanical dimensions and compliance status. Ensure the component matches the required CASE 465A-06 package specification. Confirm that the 28 V operating voltage aligns with your system design requirements before procurement.

Selection Notes

Select this component for designs requiring high linearity and efficiency in the 2300-2400 MHz band. Consider the thermal management capabilities provided by the ceramic flatpack package. Evaluate the 120 W CW output against your system's power budget and ensure compatibility with standard 28 V bias supplies.

Part Context

This part belongs to NXP's HV8 series of RF power MOSFETs, which are engineered for high-voltage, high-power applications. These devices are commonly used in telecommunications infrastructure where robust performance and long-term reliability are critical. The series supports various frequency bands including L-band and S-band configurations.

Replacement Considerations

Consult official NXP substitution guides for verified alternatives. Cross-reference electrical parameters such as gain, efficiency, and breakdown voltage when evaluating potential substitutes.