MRF8S26120HR3

Overview

The MRF8S26120HR3 is a lateral N-channel RF power MOSFET designed for cellular base station applications. It operates within the 2110 to 2170 MHz frequency range with an average output power of 48 W at 28 V. The device supports Class AB and Class C operation for typical cellular modulation formats. It features enhanced ruggedness, capable of handling high voltage standing wave ratio (VSWR) conditions. The component utilizes a surface-mount package suitable for automated assembly in telecommunications infrastructure.

Feature Summary

• Designed for CDMA and W-CDMA base station applications
• Supports Class AB and Class C operational modes
• Enhanced ruggedness for high VSWR tolerance
• Optimized for single-carrier performance

Applications

• CDMA base station power amplification
• W-CDMA cellular infrastructure
• Single-carrier modulation systems

Procurement Notes

Verify the specific suffix HR3 against current manufacturer documentation to confirm package type and reel specifications. Confirm availability status as this series may be subject to discontinuation or lifecycle changes. Ensure compatibility with existing thermal management designs and biasing circuits specified for 28 V operation. Cross-reference pinout configurations with official datasheets before integration.

Selection Notes

Select this component for applications requiring robust performance in the 2110-2170 MHz band. Consider its 48 W average power capability relative to system gain requirements. Evaluate thermal dissipation needs based on the specified drain efficiency. Verify that the operating class aligns with the desired linearity and power back-off characteristics for the target modulation scheme.

Part Context

This part belongs to the MRF8S lateral N-channel RF power MOSFET family from NXP Semiconductors. These devices are engineered specifically for wireless communication infrastructure. The family offers various power levels and frequency bands to support different generations of cellular standards. The MRF8S26120HR3 variant targets specific PCS and AWS band requirements.

Replacement Considerations

Consult official substitution guides for equivalent lateral N-channel MOSFETs in the same frequency and power class. Verify pin-to-pin compatibility and electrical parameter overlaps before considering alternatives.