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The MRF8S8260HSR3 is an RF LDMOS FET manufactured by NXP USA Inc., designed for high-power applications in the VHF band. It operates at a frequency of 895 MHz with a rated voltage of 70 V and a test voltage of 28 V. The device delivers an output power of 70 W and provides a gain of 21.1 dB. Packaged in NI-880S, it supports surface mount installation. This component is currently obsolete.
Verify availability through authorized channels as this part is officially marked obsolete. Confirm package integrity and datasheet revisions before procurement. Ensure compatibility with existing thermal management solutions due to high power dissipation requirements.
Select this component for VHF applications requiring 70 W output power. Consider the 21.1 dB gain for amplifier design efficiency. Evaluate the NI-880S package constraints for PCB layout. Assess obsolescence impact on long-term supply chain stability.
Part of the MRF8S series from NXP, focusing on high-power RF solutions. The MRF8S8260HSR3 specifically targets VHF bands, distinguishing itself from UHF counterparts. It represents a legacy solution for established broadcast designs requiring proven reliability.
No public confirmed substitute part numbers are available. Designers should evaluate newer NXP series or alternative manufacturers for equivalent VHF high-power specifications.