MRF8S9100HR3

Overview

The MRF8S9100HR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for GSM and GSM EDGE base station applications operating between 865 MHz and 960 MHz. It supports Class AB and Class C modulation formats with a drain-source voltage of 70 Vdc and an operating voltage up to 32 Vdc. Typical performance at 28 Vdc includes 72 Watts CW output power with 19.3 dB gain, or 45 Watts average power for GSM EDGE. The device features internal input matching, integrated ESD protection, and a thermal resistance of 0.60 °C/W.

Feature Summary

• Internally matched for ease of use
• Integrated ESD protection
• Greater negative gate-source voltage range for improved Class C operation

Applications

• GSM base station applications
• GSM EDGE base station applications
• Class AB cellular base station modulation formats
• Class C cellular base station modulation formats

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm current availability status as components may be subject to discontinuation. Ensure compatibility with existing thermal management solutions given the specified junction temperature limits. Validate that the intended application falls within the documented frequency and voltage ranges.

Selection Notes

Select this component for designs requiring high linearity in GSM and EDGE networks. Consider the internal input matching to simplify circuit design. Evaluate thermal requirements based on the specified thermal resistance values. Ensure the system can handle the maximum operating junction temperature during peak load conditions.

Part Context

This lateral N-channel RF power MOSFET belongs to the MRF8S9100 series. It is manufactured by Freescale Semiconductor, now part of NXP Semiconductors. The device utilizes silicon technology and is packaged in a surface-mount format suitable for automated assembly processes in telecommunications infrastructure.

Replacement Considerations

MRF8S9100HSR3

FAQ

What is the typical drain efficiency at 960 MHz?

The typical drain efficiency is 54.1% at 960 MHz under continuous wave conditions.

Does the device include input matching?

Yes, the device is internally matched for ease of use.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225 °C.