MRF8S9170NR3

Overview

The MRF8S9170NR3 is an RF Power Field Effect Transistor utilizing N-Channel Enhancement-Mode Lateral MOSFET technology. Designed for cellular base station applications, it operates within the 920 MHz to 960 MHz frequency range. The device provides a typical output power of 50 W and a gain of approximately 19.1 dB. It features a 70 V Drain-Source Breakdown Voltage and is optimized for Class AB and Class C amplifier operations.

Feature Summary

• Utilizes Lateral MOSFET technology for high-performance RF amplification
• Optimized for internal impedance matching to simplify circuit design
• Includes integrated ESD protection circuits for enhanced reliability

Applications

• CDMA base station applications
• GSM EDGE wireless network systems
• Class AB and Class C cellular base station amplifiers

Procurement Notes

Verify the specific ordering suffix to confirm package type and tape/reel configuration. Ensure compatibility with existing thermal management solutions, as surface-mount RF transistors require precise PCB layout for heat dissipation. Confirm RoHS compliance status if required by environmental regulations. Cross-reference pinout diagrams with current schematics to prevent installation errors during manufacturing or replacement processes.

Selection Notes

Select this component for wideband cellular infrastructure requiring stable performance across the 920-960 MHz spectrum. Consider its 50 W output capability for medium-power amplifier stages. Evaluate thermal resistance requirements against system constraints. Verify that the internal matching network aligns with the intended load impedance without external components. Assess efficiency metrics relative to power consumption targets in base station deployments.

Part Context

This transistor belongs to Freescale's portfolio of RF power devices designed for telecommunications infrastructure. It represents a transition toward surface-mount packaging for improved automation in manufacturing. The device complements other models in the series, offering variations in power handling and frequency bands to support diverse global cellular standards and network architectures.

Replacement Considerations

MRFE6S9200HR3

FAQ

What amplifier classes are supported?

The device is designed for use in Class AB and Class C operations.

Does the part include protection features?

Yes, it contains internal ESD protection circuits.