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The MRF8S9232NR3 is a lateral N-channel RF power MOSFET designed for CDMA base station applications within the 865 to 960 MHz frequency range. It delivers an average output power of 63 Watts at 28 Volts drain supply voltage with a quiescent current of 1400 mA. The device supports Class AB and Class C operation for typical cellular modulation formats, including W-CDMA with 3.84 MHz channel bandwidth and 7.5 dB input signal PAR. At 920 MHz, it achieves a gain of 18.4 dB and drain efficiency of 36.5%. It is capable of handling 10:1 VSWR at 32 Vdc and provides enhanced ruggedness.
Verify component authenticity through authorized NXP distributors or certified suppliers. Confirm the OM-780-2 package type and NR3 suffix designation match requirements. Check RoHS compliance status and ensure proper ESD handling during installation. Validate that the discontinued status does not impact long-term support needs for the specific design.
Select this component for designs requiring 63W average power in the 865-960 MHz range. Ensure thermal management solutions accommodate the specified dissipation levels. Verify bias circuitry supports the 28V supply and 1400mA quiescent current. Consider the device's ruggedness features for environments demanding high VSWR tolerance.
This part belongs to NXP's MRF8S series of lateral N-channel RF power MOSFETs. These devices are engineered for high-efficiency performance in wireless communication infrastructure. The MRF8S9232NR3 specifically targets the 900 MHz cellular bands, offering a balance of power output and linearity for base station power amplifier stages.
Public confirmed substitute part numbers are not available in the provided documentation. As the product is discontinued, engineers should consult NXP for recommended obsolescence alternatives or next-generation replacements suitable for the same frequency and power specifications.