MRF8VP13350GNR3

Overview

The MRF8VP13350GNR3 is a silicon LDMOS RF power transistor manufactured by NXP Semiconductors. It operates within the 700 MHz to 1300 MHz frequency range and delivers 350 W of continuous wave output power at a maximum drain voltage of 50 V. The device utilizes an OM-780G-4 screw-mount package and features internal input matching for simplified circuit integration.

Feature Summary

• Internal input matching network simplifies design requirements
• Capable of single-ended or push-pull configurations
• Integrated electrostatic discharge protection

Applications

• Industrial, scientific, and medical (ISM) applications
• 915 MHz industrial heating and welding systems
• 1300 MHz particle accelerators
• 900 MHz TETRA base stations

Procurement Notes

Verify component authenticity through authorized channels as this part number may be discontinued. Confirm RoHS compliance status and check for valid Certificate of Analysis documentation prior to procurement. Ensure the supplier provides traceability records to validate the manufacturing origin and quality standards associated with the original manufacturer specifications.

Selection Notes

Select this component for narrowband high-power RF amplification tasks requiring robust performance in the 700 to 1300 MHz spectrum. Evaluate thermal management capabilities due to the high power density inherent in the OM-780G-4 package. Consider system impedance matching requirements despite the integrated input matching feature to ensure optimal efficiency and stability under varying load conditions.

Part Context

This device belongs to the MRF8VP13350N series of RF power transistors designed specifically for ISM band operations. It represents a high-power solution utilizing silicon LDMOS technology, offering a balance between output capability and operational reliability for demanding industrial and communication infrastructure environments.

Replacement Considerations

Verify compatibility with the MRF8VP13350N variant regarding pinout and electrical characteristics before substitution.