MRF8VP13350NR3

Overview

The MRF8VP13350NR3 is a silicon LDMOS RF power transistor manufactured by NXP Semiconductors. It operates within the 700 MHz to 1300 MHz frequency range and delivers 350 W of continuous wave output power at a drain voltage of 50 V. The device features an OM-780G-4 package with screw mount installation, supporting a maximum junction temperature of 150 °C.

Feature Summary

• Internal input matching for simplified circuit design
• Capable of single-ended or push-pull configurations
• Integrated ESD protection

Applications

• Industrial, Scientific, and Medical (ISM) heating systems
• Particle accelerators
• TETRA base stations

Procurement Notes

Verify component authenticity through authorized channels as this part may be subject to lifecycle changes. Confirm RoHS compliance status and specific datasheet revisions prior to integration. Ensure thermal management solutions align with the specified junction temperature limits during operation.

Selection Notes

Select this component for narrowband applications requiring high power density in the UHF spectrum. Evaluate system requirements against the 50 V operating voltage and 350 W CW capability. Consider the OM-780G-4 package constraints for mechanical mounting and heat dissipation pathways.

Part Context

This device belongs to the MRF8VP13350N family of RF power transistors designed for industrial and broadcast markets. It utilizes Silicon LDMOS technology to provide robust performance in high-power amplification scenarios across wide frequency bands.

Replacement Considerations

MRF8VP13350GNR3