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The MRF8VP13350NR5 is an N-channel enhancement-mode lateral MOSFET RF power transistor designed for industrial, scientific, and medical applications within the 700 to 1300 MHz frequency range. It delivers 350 W continuous wave or pulse power in narrowband operation. The device operates at a maximum drain-source voltage of 50 Vdc and features internal input matching. Key electrical characteristics include a typical power gain of 19.2 dB and a drain efficiency of 58.0% at 1300 MHz under pulsed conditions.
Verify the exact ordering suffix against the manufacturer's official documentation to confirm package type and reel specifications. Confirm RoHS compliance status and moisture sensitivity level ratings prior to integration. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values provided in the datasheet.
Select this component for high-power RF applications requiring robust performance across the 700-1300 MHz spectrum. Consider its suitability for linear applications when appropriate biasing is applied. Evaluate the ruggedness specifications regarding load mismatch tolerance if operating in environments with potential impedance variations.
This LDMOS transistor belongs to the MRF8VP13350N series manufactured by NXP Semiconductors. It is housed in an OM-780-4L plastic package. The device is specifically engineered to handle high power densities while maintaining stability and efficiency in demanding ISM band applications.
Consult the official NXP documentation for verified substitute part numbers. Cross-reference pin connections and thermal characteristics carefully before implementing any alternative components.